Y and Z luminescence of polycrystalline cadmium telluride

Abstract

The properties of polycrystalline CdTe with a grain size of 5–30 μm have been investigated using the microphotoluminescence methods of spectral analysis and topography. This material has been prepared by direct synthesis in a vapor flow of components at a low temperature. The dominance of the Y and Z bands in the spectra reflects a nonequilibrium character of the crystallization processes. The superlinear dependences of the luminescence intensity on the level of the band-to-band excitation indicate the exciton nature of the corresponding transitions. The activation energies for temperature quenching of luminescence in the temperature range T = 100–150 K are found to be 120 meV for the Y luminescence and 180 meV for the Z luminescence, which correspond to the dissociation of excitons bound to defects with the transition of charge carriers to the conduction and valence bands. The monochromatic topography data indicate that Y and Z defects have different material bases.