Abstract
The structure of pulsed laser deposited AIN films was investigated by X-ray diffractometry. The AIN films were deposited on (111) single-crystalline Si wafers in ambient nitrogen at a pressure of 0.1 Pa via ablation of an AIN target using KrF* excimer laser radiation (248 nm wavelength, t >= 7 ns) with 3.7 J/cm2 incident fluence. The obtained films had a polycrystalline structure with cubic phase nanocrystallites. The size of the crystallites, as estimated from the Bragg peaks, was about 55 nm slightly depending on the post-deposition cooling rate.
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