Abstract
Cubic boron nitride (cBN) as the outstanding representative of the family of semiconducting wide bandgap nitrides and the closest analogue of diamond, is produced and investigated. XRD as method for doping control of cBN with impurities of large atomic sizes, is suggested. The larger an atomic size mismatch between doping and intrinsic atoms of a semiconductor’s crystal lattice, the stronger its response through own strains and distortions. The distortions are expected to be notable in the case of the smallest intrinsic atoms of cBN and diamond. The light-emitting cBN doped with various rare-earth elements (RE) in different concentrations under high pressure conditions is synthesized in form of the cBN: RE single phase micropowders. The micro-powders showed the discrete photoluminescence spectra in IR-, red and green spectral ranges which were attributed to the intra-electronic transitions of RE3+ ions located in cBN crystal lattice. The locations of the RE3+ ions in cBN crystal lattice are discussed. The data of XRD (CuKα) analysis of the cBN:RE micropowders are repre- sented. Extra-splits (as the additional ones to the α1-α2-splits on CuKα) of the cBN parent peaks in XRD patterns of the cBN: RE, are discovered and analyzed using appropriate computer programs. As established, crystal lattice of cBN due to the incorporation of RE3+ ions, represents a disordered solid solutions which are nonuniformly distorted in dependence on the ions’ size and their concentrations in cBN. Results of the present work can be useful to manufacture cBN with predictable functional properties, as well as for in situ doping control of cBN and diamond.
Highlights
Cubic boron nitride is the widest bandgap (Eg = 6.4 eV) semiconductor in the AIIIBV group
They are originated from the consequence of the radiative electronic transitions 5D0→7DJ (J = 0, 1, 2, 3, 4) of Eu3+ ions which are located in Cubic boron nitride (cBN) crystal lattice in crystalline field of low symmetry [2]
In this work we first can obtain, that headlines of the spectra (the insets in Figures 1(a)-(c)) are visibly split into two separate main lines. It means that Eu3+ ions occupy two sites of low symmetry in the cBN crystal lattice which create two luminescence centers. It is clear from the insets, that the Eu3+ ions occupy the second site in cBN crystal lattice the more expectable, the more concentration of Eu in cBN
Summary
CBN has been recognized as the unique material promising for the use in opto- and microelectronics, including for the employment in light emitters of various purposes operative in UV, visible, and IR spectral regions. The successful production of RE-activated cBN samples exhibiting intense light emission in the IR, visible, and UV spectral ranges, variously stimulated, might open up opportunities for manufacturing new generation light-emitting diodes, solid state lasers, detectors, and phosphors operating under extreme conditions. It is expected that the high thermal stability will make cBN virtually indispensable for the use in passive elements of future electron devices, such as takeoffs of heat from chips with high heat release, by ensuring their high operation speed. A good alternative to single crystals of cBN for opto- and microelectronic applications can be its other morphological forms, like micropowders which, while exhibiting intense light emission (LE) are ready for the utilization by downconversion phosphors
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