XRD, AFM, DRS and Photosensitivity of CZTSe Thin Films Prepared by Vacuum Evaporation Method

Abstract

This article reports the preparation and study the influence of annealing temperature on Cu2ZnSnSe4 (CZTSe) thin films by thermal evaporation method. The structural, morphology and optical properties of the CZTSe thin films were studied by using X-ray diffraction (XRD), atomic force microscope (AFM), diffuse reflection spectroscopy (DRS) and photoluminescence (PL) techniques respectively. The diffraction analysis indicates that the annealed films showed improved crystallite size with annealing temperature. The CZTSe film annealed at 300 °C shows better optical absorption and good photosensing behavior among the films. It could be attributed to the number of bigger size particles are rich in 300 °C annealed films as well as lower band gap energy 1.45 eV. The thin film annealed at 300 °C shows good photosensitivity. From the experimental studies the optimum annealing condition for obtaining pure CZTSe thin films was found to be 300 °C.