Abstract
Large diameter aluminum nitride (AlN) substrates, up to 50 mm, were manufactured from single crystal boules grown by physical vapor transport (PVT). Synchrotron-based x-ray topography (XRT) was used to characterize the density, distribution, and type of dislocations. White beam topography images acquired in transmission geometry were used to analyze basal plane dislocations (BPDs) and low angle grain boundaries (LAGBs), while monochromatic beam, grazing incidence images were used to analyze threading dislocations. Boule diameter expansion, without the introduction of LAGBs around the periphery, was shown. A 48 mm substrate with a uniform threading dislocation density below 7.0 x 102 cm-2 and a BPD of 0 cm-2, the lowest dislocation densities reported to date for an AlN single crystal this size, was demonstrated.
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