Abstract
Niobium and molybdenum thin films have been homogeneously implanted with different ions (N, Ne, P, S). X-ray diffraction measurements have been performed on the layers before and after implantation for different implanted impurity concentration values. The intensity data have been analyzed using modified Wilson plots. In Nb implanted with N the defect structure could be described by small static displacements of the host lattice atoms. A similar defect structure was observed in N-implanted Mo in the initial state of disordering ( N concentration <10 at.%). For higher N concentrations (≈20 at.%) and for P and S implantation partial or total amorphization of the layers occurred.
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