Abstract
Si islands were grown on Ge(111) in Volmer-Weber growth mode with a 40-nm thick Ge0.85Si0.15 buffer. The state of strain and chemical composition of these islands were evaluate by grazing incidence anomalous x-ray diffraction. The results show evidence of lattice coherence and Ge-Si intermixing. A direct relationship between increase in substrate temperature and enhancement of alloying was found, evidencing the importance of atomic interdiffusion in this growth mode.
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