Abstract
Point defects in solid Argon have been created by X-irradiation at 10 K. Lattice parameter change can be used as a measure of defect concentration. From dose curves the defect formation yield was determined. The absorbed energy per Frenkel pair was found to be EFP = (20 ± 5) eV. The volume of spontaneous recombination was determined to be v = 60 atomic volumes in Argon after irradiation at 10 K. From isochronal and isothermal annealing measurements at least 7 different annealing stages can be separated. The first 5 stages with annealing temperatures up to 23 K are due to single defect recombination. The activation energy for uncorrelated single defect recombination was found to be w = 55 meV.
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