Abstract
Point defects in solid Argon have been created by X-irradiation at 10 K. Lattice parameter change can be used as a measure of defect concentration. From dose curves the defect formation yield was determined. The absorbed energy per Frenkel pair was found to be EFP = (20 ± 5) eV. The volume of spontaneous recombination was determined to be v = 60 atomic volumes in Argon after irradiation at 10 K. From isochronal and isothermal annealing measurements at least 7 different annealing stages can be separated. The first 5 stages with annealing temperatures up to 23 K are due to single defect recombination. The activation energy for uncorrelated single defect recombination was found to be w = 55 meV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
