Abstract
X-ray scattering has been used to study the interfacial structure of a dry oxide grown at room temperature on a system consisting of four layers of Si epitaxially grown on Ge(001). A 2×1 structure is seen at the interface, whose shape parallels the underlying terrace structure. The model producing the best fit to the specular reflectivity data consists of a Ge single crystal substrate, five intermediate ordered layers and an amorphous oxide layer. X-ray Photoelectron Spectroscopy (XPS) data is also presented, consistent with the specular model, which together indicate that not all of Si is oxidized and that there exists Ge in the SiOx amorphous layer.
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