Abstract
AbstractAbsolute K-shell ionization cross sections were measured for Ti, Co, Ge, Rb, and Sn for incident oxygen ions from 16-44 MeV. The x-rays were measured with a high resolution Si(Li) detector (166 eV at 5.9 keV). All of the data represents cross section measurements for thin targets. The measured cross sections for these elements are compared to the theoretical predictions of the Binary Encounter Approximation (BEA). Kα/Kβratios and energy shifts were also extracted from the data. The experimental data are compared to measured cross sections for other elements to give an overview of the systematics for oxygen ion induced x-ray production cross sections in this energy range. Some comment will also be given in regard to the use of oxygen ions to measure the parameters associated with ion implanted semiconductors.
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