Abstract
Two new types of targets: ultrathin freely suspended carbon films and porous Si, both revealing thermoconductivity restriction leading to plasma overheating upto electron temperature above 1 keV under "moderate" intensities 1015 - 1016 W · cm-2 has been investigated experimentally. For the ultrathin carbon film of 20–30 nm X-ray yield threefold increase has been observed. Computer simulations decribe well the observed behaviour of the X-ray yield, and the electron temperature of 700 eV was deducted for the film of 10 nm in thickness. Por-Si produces greater X-ray flux under intensity of 1016 W · cm-2 as compared to the solid Si. If the intensity increased the total X-ray yield from por-Si undergoes "saturation", while the X-ray yield from solid Si fits as ≈ I2. Simple model to describe the "overheating" of Si plasma using a set of ultrathin films is developed. Some promising advantages of new targets are discussed.
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