Abstract
The room temperature oxidation of GaAs, GaP and InSb upon exposure to atmospheric dry O 2 has been studied by analyzing XP spectra quantitatively. The rate of oxidation decreases in the order InSb > GaP > GaAs. For GaAs and GaP, evidences of the formation of metastable surface complex are shown: the ratio of A IIIO bonds to B VO bonds are about 2 and 1, respectively. For InSb, it is shown that both elements are oxidized to comparable extent, giving rise to In 2O 3 and Sb 2O 3 probably, by using Auger spectra as well as photoemission spectra.
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