Abstract
ABSTRACTWe have studied the influence of different GaAs surface treatments on the chemical composition and electrical behavior of the Si 3 N4 -GaAs interface, where Si 3 N4 was plasma enhanced chemical vapor deposited (PECVD) onto the treated GaAs(100) substrate. The chemistry of the resulting interface has been studied by X-ray photoelectron spectroscopy (XPS). It has been demonstrated that the chemical composition of the Si 3 N4-GaAs interface is drastically dependent on GaAs surface pretreatment and r.f. plasma excitation frequency. Output-input powers characteristics have been measured on chemically treated planar MESFET after Si3N4. passivation.
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