Abstract

An X-ray photoemission spectroscopy (XPS) study at different takeoff angles of the derivatized surface resulting after prolonged (2 h) exposure of hydrogen-terminated 1×1-reconstructed (100)-oriented silicon to liquid 1-octyne at 170 °C has been carried out. The experimental data may be interpreted assuming that: (1) the grafting occurs through the formation of Si–C bonds; (2) in the considered conditions, one π bond of the octyne has a large survival probability after the grafting; and (3) side reactions leading to Si–O–C or Si–C(O) moieties are also active.

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