Abstract
The authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, ΔE1s-ΔE2p, for various Si compounds using high-resolution high-energy synchrotron radiation. They find that the ΔE1s-ΔE2p values are in very good correlation with the dielectric constant values of the Si compounds. Using this relation, they deduce the local dielectric constant for each of the Si intermediate oxidation states formed at the SiO2∕Si interface. The results are in good agreement with values predicted by a first-principles calculation.
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