Abstract
AbstractThe grain boundary chemistry of reaction bonded silicon nitride (RBSN) and the effects of iron species and content on this chemistry are investigated using X-ray photoelectron spectroscopy (XPS). Data are reported for semiconductor grade RBSN, Fe-doped semiconductor grade RBSN, and metallurgical grade RBSN specimens. Results indicate that the grain boundaries have an elemental composition of Si, N, O, and C, with important chemical differences depending on the purity of the starting material. In the RBSN made from metallurgical grade silicon, the grain boundaries have a distinct “oxide-like” layer, with a subregion of Si3N4. No distinct oxide layer was observed in the RBSN made from semiconductor-grade silicon, where the O appears to be uniformly incorporated into the Si3N4.
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