Abstract

The scanning electron microscope (SEM) was primary developed for imaging applications. With the introduction of the Si(Li) energy dispersive spectrometer (EDS), simultaneous imaging and x-ray microanalysis became possible. However, long working distance and high current were needed because the position and small solid angle of the EDS detector. SEM was initially and is still optimized for imaging applications, where the high spatial resolution is generally obtained at short working distance. This problem is still relevant today and unfortunately x-ray microanalysis is never performed in the best imaging conditions, i.e., not with the smallest probe size. With the introduction of an annular silicon drift detector (SDD) system, scanning electron microscopy is facing a revolution. This detector is inserted below the objective lens which gives a higher solid angle (up to 1.2 sr). Also, a lower working distance and probe current can be used. An improved spatial resolution becomes possible during x-ray microanalysis. At this point, the time required for x-ray imaging will be of the same order as for the atomic number contrast images achieved through backscattered electrons (BSE) imaging [1].

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