X-ray evaluation of electronic and chemical properties and film structures in SiN passivation layer on crystalline Si solar cells

Abstract

We investigated the electronic chemical properties and film structures in SiN passivation layers on crystalline Si by X-ray photoelectron spectroscopy (XPS) and X-ray reflectometry (XRR). From XPS analyses, a N-rich component (N–Si–N) and oxygen mixing were observed at the interface. The longest lifetime was obtained after post deposition annealing at 600 °C, where the N-rich layer was the thinnest with small peak height. Therefore, longer lifetime could be obtained as the N concentration at the interface decreased. The film consisted of three SiN layers and one SiO2 layer, as confirmed by XRR profile fitting. From the density profiles, a longer lifetime was obtained when the density gradient in the oxygen mixing layer was small. Results of XPS and XRR suggested that N at the interface significantly affected the lifetime. We believe it is important to understand the electronic chemical properties at the passivation interface to realize high-efficiency Si solar cells.