Abstract
Recently developed aberration correctors have brought significant improvements in materials characterization. In aberration-corrected scanning transmission electron microscopy (STEM), the incident probe dimensions can be refined significantly, and image resolution has already reached sub-angstrom levels in high-angle annular dark-field (HAADF) STEM imaging (Batson et al. 2002, Nellist et al. 2004). In addition, materials characterization at the atomic level can routinely be performed by electron energy-loss spectrometry (EELS) in aberration-corrected STEM (e.g. Varela et al. 2005). The aberration correction of the incident beam is also very useful for X-ray energy-dispersive spectrometry (XEDS) because the spatial resolution can be dramatically improved with the refined probe (Watanabe et al. 2006).
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