X-ray diffraction studies of CdTe grown on InSb

Abstract

Cadmium telluride layers, grown on InSb substrates which were (100) 2° oriented towards (110), were examined using double crystal X-ray diffraction in conjunction with secondary ion mass spectrometry and photoluminescence. The layers were grown by organometallic vapor phase epitaxy at atmospheric pressure. The crystal quality of the CdTe is shown to be related to the substrate temperature and the nature of the surface prior to growth. Growth on diethyltelluride stabilized InSb substrates resulted in epitaxial layers with a misorientation of about 235 arc sec with respect to the substrates. On the other hand, layers followed the orientation of the substrates, when dimethylcadmium stabilized InSb was used. Growth at 350° C resulted in the smallest X-ray rocking curve (DCRC), with a full width at half maximum (FWHM) of about 20 arc sec Secondary ion mass spectrometry and photoluminescence data complement the results of this X-ray diffraction study.