Abstract
In this paper it is shown that diffuse-scattering experiments within the region of total external reflection can be explained quantitatively using the distorted-wave Born approximation for layer systems. Three Si/Ge samples with different degrees of complexity were investigated. The simultaneous analysis of the specular reflected intensity and the diffuse scattering leads to one consistent set of interface and layer parameters, which is able to fit both the shapes and the locations of all dynamic peaks in the off-specular scans and the characteristics of the reflected intensity. Therefore the distorted-wave Born approximation seems to give a correct and complete description of the diffuse scattering in the region of total external reflection.
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