Abstract
Two different structures of one-dimensional quasiperiodic AlAs/GaAs superlattice are fabricated by migration-enhanced epitaxy, and their structural properties are studied by X-ray diffraction. One structure is a well-known Fibonacci superlattice. The influence of interface roughness on the satellite peaks is analyzed for structures with a unit layer thickness of only three monolayers. The full width at half maximum of these peaks shows that the interface roughness in the structures grown by MEE is about half that of structures grown by MBE. The other structure is a Harper superlattice. In this structure, the mole fraction x of each AlxGa1-xAs unit layer is modulated according to a cosine function. The experimental results show the advantage of MEE for growing such composition-modulated structures.
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