Abstract
An examination of the surface silicon layer of SOI substrates was made using X-ray double crystal rocking curve (XDCRC) and reflection topographic analysis (XRT). The original intent was to examine dislocations in SOI substrates-SIMOX, and BESOI (bond and etchback silicon-on-insulator). The properties of the superficial or surface silicon layer were characterized with reflection topography for the three SOI technologies, and these results were correlated with crystal quality measured by XDCRC. Reflection topography did not reveal surface imperfection, defects, or dislocations in SIMOX or BESOI, but XRT revealed the transmission of substrate strain or warpage into the surface silicon layer for all SOI samples. Rocking curves confirmed the high quality of the surface silicon layer. >
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