Abstract
We have studied the electronic properties of 3C- and 4H-SiC with X-ray absorption (XAS). Particular emphasis is placed on the conduction bands because they exhibit larger differences between the various SiC polytypes than valence bands. XAS spectra at the Si2p and C1s edges provide projections onto Si3d, 4s and C2p conduction band states. We explain the observed differences in the Si L 2,3 XAS data to arise from transition into dispersive bands which occur at the M and K point of the hexagonal Brillouin zone. The XAS data are sensitive to a difference in the dispersion of the two lowest conduction bands. For 3C-SiC the dispersion is larger than for 4H-SiC in agreement with theory. We compare the XAS data at the Si L edge with CFS and CIS spectra and find that the SiLVV Auger is dominant.
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