XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)

Abstract

The nitridation of GaAs(1 0 0) surfaces has been studied using XPS spectroscopy, one of the best surface sensitive techniques. A glow discharge cell was used to produce a continuous plasma with a majority of N atomic species. We used the Ga3d and As3d core levels to monitor the chemical state of the surface and the coverage of the species. A theoretical model based on stacked layers allows to determine the optimal temperature of nitridation. Moreover, this model permits the determination of the thickness of the GaN layer. Varying time of nitridation from 10 min to 1 h, it is possible to obtain GaN layers with a thickness between 0.5 nm and 3 nm.