Abstract

In many electronic applications, the surface properties of hydrogen-terminated diamond films determine the eventual performance of the electronic device. In this work, diamond films were grown by hot-filament chemical vapor deposition method and hydrogenated films were obtained by hydrogen plasma treatment. X-ray photoelectron spectroscopy analysis was carried out to evaluate the film surface after annealing treatment. The C1s XPS spectrum showed the C1s spectrum changed after annealing treatment. In air atmosphere, hydrogen decreased and oxygen absorption increased. The interaction on the surface changed drastically after annealed in argon atmosphere and phase transition would happen when the annealing temperature increased to 600°C.

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