Abstract
We have investigated the changes of chemical bonding states of an H-terminated silicon surface under inert gas and ultrahigh vacuum (UHV) annealing using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). SiC is formed (corresponding to monolayer) under inert gas and UHV annealing at around 500°C, which is coincident with the temperature of the dangling bonds formation at the silicon surface by hydrogen desorption, whereas SiC is not formed under annealing. From the precise analysis using a combination of XPS and TDS, the SiC formation is related to the reaction between the silicon surface and the organic contamination that is unavoidably adsorbed during air exposure. We also studied the electrical properties of metal oxide semiconductor capacitors with a chemical vapor deposited silicon oxide gate insulator formed on Ar- and -annealed silicon surfaces. Ar preannealing increases the leakage current by approximately times compared with annealing. © 2005 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
