Abstract
The binding state of Si in films electrodeposited in trimethyl-n-hexylammonium bis(trifluoromethylsulfonyl)imide containing 0.1 mol L−1 SiCl4 was investigated by means of X-ray photoelectron spectroscopy (XPS). The bombardment of Ar+ mainly causes the transition of spectrum shape from bimodal to broad in XPS spectra of Si 2p core level when Ar+ etching is conducted. Angle-resolved XPS confirmed that the bimodal spectrum for the electrodeposited film surface is due to the oxidation in the air. The electrodeposited Si film was also characterized by reflectance and photoluminescence (PL) measurements. These measurements demonstrated that the electrodeposited film contains amorphous Si with the band gap of about 1.55 eV and a broad PL peak centered at the photon energy of 1.37 eV.
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