Abstract
Five atomic percentage Co-doped SnO 2 (Sn 0.95Co 0.05O 2) thin films have been deposited on (1 0 0) Si substrates by pulsed laser deposition. The Sn 0.95Co 0.05O 2 thin films with rutile-structure on (1 0 0) Si substrates could be well deposited under the appreciate deposition parameters. The Sn 0.95Co 0.05O 2 thin film has good room temperature magnetic property with the saturated magnetic moment ( m s) of 1.3 μ B/Co at 293 K. The X-ray photoelectron spectroscopy (XPS) measurements for the Sn 0.95Co 0.05O 2 thin film on Si predicated that Co has oxidation states of +3. The good magnetic property of the Co-doped SnO 2 may be deduced the exchange between Co 3+ and Co 3+ through the oxygen vacancy.
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