Abstract
X-ray photoelectron spectroscopy has been used to investigate positive charge accumulation on amorphous SiO2 films induced by in situ X-ray irradiation. We found out two different kinds of samples. The charge accumulation at the surface affects the properties of films. Then, by examining the significant changes of chemical shift and FWHM value, the films show a character of saturation during the process and the results can trace to oxygen vacancies. From the results of loss measured before and after the irradiation, we can say that the performance of highly reflective coatings, especially the surface SiO2 thin films, will directly affect the gyro abilities.
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