Abstract
ZnO and Ni doped ZnO (NiZnO) thin films were fabricated on c-plane sapphire substrate using Pulsed Laser Deposition (PLD) Technique. The surface states of the deposited thin films were analyzed using X-Ray Photoelectron spectroscopy (XPS) technique. The Zn LMM Auger transitions during XPS were examined in detail to identify the doping induced structural transformations in ZnO films. Hall effect and UV-Visible spectroscopic measurements were carried out on the prepared samples to estimate the electronic and optical properties. The obtained results favor the utilization of NiZnO as active well layer and ZnO as barrier layer in NiZnO/ZnO based Quantum Well structure fabrication.
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