Abstract

The surface properties of vertically aligned ZnO nanowires grown by chemical vapour deposition on GaN using a gold layer as a catalyst are investigated by X-ray Photoelectron Spectroscopy as a function of annealing temperature in ultra high vacuum (UHV). The nanowires are 8.5 μm long and 60 nm wide. 87% of the surface carbon content was removed after annealing at 500 °C in UHV. Analysis of the gold intensity suggests diffusion into the nanowires after annealing at 600 °C. Annealing at 300 °C removes surface water contamination and induces a 0.2 eV upward band bending, indicating that adsorbed water molecules act as surface electron donors. The contaminants re-adsorbed after 10 days in UHV and the surface band bending caused by the water removal was reversed. The UHV experiment also affected the nanowires arrangement causing them to bunch together. These results have clear implications for gas sensing applications with ZnO NWs.

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