Abstract
X‐ray photoelectron spectroscopy (XPS) was employed to characterize the oxidation of Hg1−xCdxTe surfaces. Surfaces investigated included those treated with a standard Br‐methanol etch and atomically clean surfaces produced by low‐energy ion bombardment. The latter type surfaces were exposed to controlled amounts of dry oxygen and laboratory ambient. The main observation on all surfaces investigated was preferential TeO2 formation at the surface. Oxidation of the atomically clean surfaces under dry conditions was found to proceed very slowly. Some surfaces were treated with simple organic acids. These surfaces upon exposure to ambient for several weeks exhibited very little or no TeO2 growth.
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