Abstract
In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I– V and photoluminescence surface state spectroscopy (PLS 3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces. The elaborated structures were characterised by I– V analysis. The saturation current I S, the ideality factor n, the barrier height Φ Bn and the serial resistance R S are determined. The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS 3 technique), the value of the interface state density N SS( E) close to the mid-gap was estimated to be in the range of 2–4 × 10 11 eV −1 cm −2, indicating a good electronic quality of the obtained interfaces. Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.
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