Abstract
Si/SiO 2, Si/Al 2O 3 and Si/MgO co-sputtered films were prepared by placing 6 or 12 Si plates (5×15 mm) on an SiO 2, Al 2O 3 or MgO target 100 mm in diameter during deposition. X-ray photoelectron spectroscopic (XPS) analysis of these films revealed that the main low valency Si state was SiO x (0< x<2) for Si/SiO 2, and Si for Si/Al 2O 3 and Si/MgO under the same preparation conditions. Although the Si/SiO 2 films maintained a homogeneous Si component profile even after heat treatment at 820°C, heat treatment above 700°C for Si/Al 2O 3 and above 300°C for Si/MgO resulted in an inward diffusion of Si. The Si/SiO 2 co-sputtered film had a stronger photoluminescence (PL) intensity at about 1.7 eV than the other two co-sputtered films from Ar ion laser excitation at 514.5 nm. The weak PL observed for Si/Al 2O 3 and Si/MgO is deduced to be due to the low content of SiO x where electrons and holes recombine and PL is emitted.
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