Abstract
Low-pressure multipolar-plasma assisted deposition on c-Si substrates has been used to grow carbon films. Angle-resolved XPS and XAES were used to analyze the initial stages of the growth as a function of the ion deposition energy. A good signal-to-noise ratio allowed us to study simultaneously the film and the relatively deep inteface without any damage to the samples. Channeling RBS, NRA and ERDA were also used to complete the analysis. The same as in the a-C: H film, the physical and chemical nature of the film/substrate interface also varies with the ionic energy impinging on the substrate. After deposition, the original native silicon oxide, 10 Å thick, is either left practically unmodified for polymer-like films or an oxicarbide SiO 1.3C 0.3 + 20%SiC about 50 Å thick is formed for “diamond-like” films.
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