Abstract
Three titanium oxynitride films have been prepared by vacuum arc discharge technique at different chamber temperatures (50 °C, 150 °C and 300 °C). X-ray photoelectron spectroscopy was used to reveal the elemental and chemical compositions by analyzing high resolution spectra of Ti 2p3/2, N 1s and O 1s. Higher temperatures were found to promote the nitride components and to produce nitrogen-rich films. Homogeneity and thickness of the films have been estimated by means of Rutherford Back Scattering technique, which showed that the film thickness increased with the increasing of temperature. A significant improvement in the crystalline quality and texture when increasing the temperature was found by X-ray diffraction technique. Electrical resistivity of the films was measured at room temperature and was found to decrease from 46.6 μΩ cm down to 26.3 μΩ cm for the samples prepared at 50 °C and 300 °C, respectively.
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