Abstract
SiN x, SiO x and SiO xH y deposits containing various hydrogen concentrations were prepared in a plasma enhanced chemical vapour deposition (PECVD) reactor using SiH 4, NH 3 and N 2O as precursor gases. These deposits were made for anti-reflection coatings on polymer substracts. In this work, we present a study of the compositions and the chemical environments of silicon, oxygen and nitrogen in these films by using XPS, XAES and FTIR characterization methods. It is shown that the SiO xN y deposits are constituted by various silicon environments which can be described by the presence of Si(O xN yH z) tetrahedra with x + y + z = 4. The amount of Si-H bonds increases in the deposits when the nitrogen concentration increases. Si-OH chemical bonds were detected for low nitrogen concentration.
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