Abstract
In this paper a Si/Ge (111) heterostructure grown by rapid lamp heating and very low pressure chemical vapor deposition (RLH/VLP-CVD) has been studied. X-ray diffraction and Raman scattering spectra have shown that the epilayer is a single crystal Si film with good structure. The results of XPS and AES analysis indicate that there is a broad transition region composed of GexSi1−x (0 ⩽ x ⩽ 1) alloy material between the epilayer and the substrate, so that a Si-GexSi1−x-Ge multilayer heterostructure has been obtained. In the transition region the oxygen concentration is very low, which is perhaps caused by Ge atoms in the layer. In the Si epilayer oxygen atoms are found in the interstitial sites in the Si lattice.
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