Abstract
Surface compositional changes induced by multistep 0.2–1.0 keV Ar + ion bombardment and subsequent annealing of the single crystalline (111) InSb 1− x Bi x ( x≅0.005) epitaxial layer have been studied for the first time by X-ray photoelectron spectroscopy (XPS). Application of Ar + ion beam with energy ≤0.5 keV produced only a slight increase of the Sb/In concentration ratio above 1.0. On the other hand, 1 keV Ar + bombardment was found as the most efficient preparation step which led to the removal of the surface oxide (identified here as Sb 2O x ), severe reduction of surface carbon content, but also to a decrease of Sb/In ratio towards anion deficiency (Sb/In<0.8). Subsequent short time anneal at 310°C became sufficient to reach nearly stoichiometric Sb/In ratio in the surface region. Final XPS measurements of the sputter-cleaned and annealed surface revealed that admixing of Bi into InSb does not shift the binding energies of Sb 3d and In 3d core-levels of the host compound. The binding energy of Bi 4f in InSb 1− x Bi x was found to be the same as in elemental Bi.
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