Abstract
In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructures formed under different conditions we experimentally confirm an increase in the metallic wetting layer thickness with a decrease in the deposition temperature. Analysis of the data obtained shows that droplet nanostructures consist of In are without Ga impurity.
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