Abstract
Using X-ray excited optical luminescence (XEOL), L- and K-edge photoluminescence yield (PLY) XANES of S and Si have been obtained on P31 (ZnS: Cu) and porous Si (PS), respectively. Both P31 and PS have a negative edge jump in PLY XANES at the L-edges. At S K-edge, for P31 the edge jump is positive. For PS both the positive and negative edge jumps have been observed at Si K-edge, depending on the sample preparation and the optical channel used. The PLY XANES correlate well with the total electron yield spectra. The site selectively of PLY XANES is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Physica B: Condensed Matter
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
