XEOL XANES of ZnS(Cu) and porous Si

Abstract

Using X-ray excited optical luminescence (XEOL), L- and K-edge photoluminescence yield (PLY) XANES of S and Si have been obtained on P31 (ZnS: Cu) and porous Si (PS), respectively. Both P31 and PS have a negative edge jump in PLY XANES at the L-edges. At S K-edge, for P31 the edge jump is positive. For PS both the positive and negative edge jumps have been observed at Si K-edge, depending on the sample preparation and the optical channel used. The PLY XANES correlate well with the total electron yield spectra. The site selectively of PLY XANES is discussed.