Abstract
Modifications of a-SiO 2 films and Ni/a-SiO 2 bilayers by irradiations with 90–350 keV Xe ions have been investigated. The effects of subsequent thermal annealings in vacuum at 298–1173 K have also been studied. The analyses were performed by means of Rutherford Backscattering Spectrometry and surface profilometry. We here report on the results of ion-beam induced surface roughening and sputtering and of the noble-gas collection curves. As to the athermal ion-beam mixing at the Ni/a-SiO 2 interface, a low mixing rate in agreement with the ballistic model was observed. Only little Xe precipitation, which would indicate the presence of end-of-range spikes, occurs at the interface. Most effects were found to strongly depend on the implanted ion fluence.
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