Abstract
This study experimentally investigated process mechanisms and characteristics of newly developed xenon flash lamp lift-off (XF-LO) technology, a novel thin film lift-off method using a light to heat conversion layer (LTHC) and a xenon flash lamp (XFL). XF-LO technology was used to lift-off polyimide (PI) films of 8.68–19.6 μm thickness. When XFL energy irradiated to the LTHC was 2.61 J/cm2, the PI film was completely released from the carrier substrate. However, as the energy intensity of the XFL increased, it became increasingly difficult to completely release the PI film from the carrier substrate. Using thermal gravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR) and transmittance analysis, the process mechanism of XF-LO technology was investigated. Thermal durability of the PI film was found to deteriorate with increasing XFL energy intensity, resulting in structural deformation and increased roughness of the PI film surface. The optimum energy intensity of 2.61 J/cm2 or less was found to be effective for performing XF-LO technology. This study provides an attractive method for manufacturing flexible electronic boards outside the framework of existing laser lift-off (LLO) technology.
Highlights
As interest in wearable electronic devices grows, research into flexible displays, the core technology for next-generation displays, is being actively conducted [1,2,3]
laser lift-off (LLO) technology involves irradiating the excimer laser beam through an optical system and the glass carrier substrate surface and separating the PI film from the bonding surface of the carrier substrate [10]. This is similar to the excimer laser annealing (ELA) process used with amorphous silicon in the low-temperature polycrystalline silicon (LTPS) transistor manufacturing process [11]
When the xenon flash lamp (XFL) energy was 2.61 J/cm2 or more, the film and the carrier substrate were completely lifted-off, but when the lift-off process was performed with more energy, the heat generated from the LTHC overloaded the PI film, causing a combustion phenomenon
Summary
As interest in wearable electronic devices grows, research into flexible displays, the core technology for next-generation displays, is being actively conducted [1,2,3]. LLO technology involves irradiating the excimer laser beam through an optical system and the glass carrier substrate surface and separating the PI film from the bonding surface of the carrier substrate [10]. When the laser beam is irradiated on the sacrificial layer, the bond between hydrogen and silicon is broken, and hydrogen gas is generated, which separates the glass substrate Another technology, EPLaR, is the most basic lift-off technology for coating PI on a carrier substrate and irradiating with a laser [17]. EPLaR, is the most basic lift-off technology for coating PI on a carrier substrate and irradiating with a laser [17] Since both methods use an expensive excimer laser source and an optical system for complex ultraviolet lasers, initial equipment and maintenance costs are very high. We investigate and describe the basic principles of XF-LO technology
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