Xenon and argon irradiation of TiN films on Al-3wt.%Mg

Abstract

The modifications of TiN films about 100 nm thick deposited via d.c. magnetron sputtering on Al-3wt.%Mg substrates and irradiated with 100–900 keV argon and xenon ions at fluences of (0.5–8) × 10 16 ions cm −2 were investigated. The effects of surface sputtering, interface mixing and segregation of the mixing ions at the interface were derived from Rutherford-backscattering spectra taken at 900 keV α particle energy. Sputtering and mixing rates were deduced and are compared with our recent findings for heavy ion-irradiated titanium and TiN films on stainless steel substrates.