Abstract
The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV 136Xe 2+ ions at two fluences 1 × 10 15 and 1 × 10 16 Xe/cm 2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S– W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 10 16 Xe/cm 2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.
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