Abstract
AbstractFilms obtained using molecular‐beam deposition of SiO powder on c‐Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100 °C annealing by photoluminescence, ultrasoft X‐ray emission spectroscopy, X‐ray photoelectron spectroscopy, X‐ray absorption near edge structure spectroscopy and X‐ray diffraction. The appearance of (111) oriented luminescent silicon nanoclusters in considerable amounts on annealing at 1000–1100 °C is established in the investigated films. An anomalous phenomenon of the X‐ray absorption quantum yield intensity inversing for the L2, 3 elementary silicon edge is detected. Models for this phenomenon are suggested. Copyright © 2010 John Wiley & Sons, Ltd.
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