Abstract
Semiconductor epitaxial chemical vapor deposited single-crystal diamond is considered as a potential material for power devices because of its unique characteristics. Its atomic purity and defect concentration have been considered in discussions on the relationship between crystal quality and device performance. In this paper, we propose a method that uses X-ray topography to experimentally analyze dislocations. The advantages of the proposed method make it suitable as a standard method for dislocation analysis. To demonstrate the method, we observe and analyze an edge dislocation and a mixed dislocation.
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