Abstract
The X-ray diffraction topography study of imperfections in synthetic mica (fluorophlogopite) crystal is reported. The main defects in synthetic fluorophlogopite crystal are one-dimensional disorder, sub-grain boundaries and dislocations. The orientations of the sub-grain boundaries and dislocations are normal to the growth front. Many defects in synthetic micas originate from the seed crystal. By controlling the orientation of the seed crystal, large-sized fluorophlogopite crystals with almost no central defects have been synthesized. In view of its excellent chemical and electrical properties, flat surface and strong X-ray diffraction intensity, large-sized fluorophlogopite crystal will find many important applications in various fields.
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