X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition

Abstract

Multiple-beam diffraction X-ray topography was used to determine the Burgers vector b of threading edge dislocations (TEDs) and basal plane dislocations (BPDs) in 4H-SiC epitaxial layers. In hexagonal crystals, the technique simultaneously yields five different diffractions corresponding to different diffraction vectors g. Hence, this method enables us to determine the components of b using the g · b = 0 rule without widely changing the diffraction geometry. The b vectors of TEDs and BPDs were successfully determined by the method. These results were then confirmed by ordinary grazing-incidence X-ray topography in order to verify the validity of this technique.